Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

A new rule of vibration sampling for predicting acoustical radiation from rectangular plates

Structural surface velocity distribution is often used to predict structural borne sound radiation. However the sampling interval of velocity should be chosen carefully to increase the prediction accuracy and to reduce the system cost. In this paper, several factors affecting the sampling interval are theoretically analyzed and discussed for a vibrating baffled rectangular plate. A new rule for the determination of the sampling interval is formulated. Using this rule, the results from both numerical simulations and experiments may be explained well.     

图像稳定技术中的像运动描述及其处理分析

随着图像系统的广泛应用,对图像的稳定要求也越来越高。图像的运动和不稳定是常见的,往往是由于载体的运动引起的,为了达到图像稳定的目的,就需要对其运动进行描述,然后采用相应的算法进行补偿。给出了运动对图像清晰度的影响及像偏移的估算,并对数字电子图像稳定系统进行了简单阐述。     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

一类非线性微分方程的脉冲镇定

针对一般形式的常微分系统提出了脉冲指数镇定的概念，具体研究了一类分离变量型非线性常微分方程的脉冲镇定问题，得到了该方程可脉冲指数镇定的充分判据，全文的概念及结论突出了脉冲在方程稳定性方面的控制效果。     

Boundary position feedback control of Kirchhoff's non‐linear strings

This paper is concerned with global stabilization of an undamped non‐linear string in the case where any velocity feedback is not available. The linearized system has an infinite number of poles and zeros on the imaginary axis. In the case where any velocity feedback is not available, a parallel compensator is effective. The stabilizer is constructed for the augmented system which consists of the controlled system and a parallel compensator. It is proved that the string can be stabilized by linear boundary control. Copyright © 2003 John Wiley & Sons, Ltd.     

Dynamic boundary stabilization of a Reissner–Mindlin plate with Timoshenko beam

This paper is concerned with well‐posedness results for a mathematical model for the transversal vibrations of a two‐dimensional hybrid elastic structure consisting of a rectangular Reissner–Mindlin plate with a Timoshenko beam attached to its free edge. The model incorporates linear dynamic feedback controls along the interface between the plate and the beam. Classical semigroup methods are employed to show the unique solvability of the coupled initial‐boundary‐value problem. We also show that the energy associated with the system exhibits the property of strong stability. Copyright © 2004 John Wiley & Sons, Ltd.     

Pointwise stabilization of strings with non‐linear feedback

We consider an initial and boundary value problem for a homogenous string subject to an internal pointwise control. The solution resulting from a non‐linear feedback is studied. We give various explicit decay estimates depending on the control position and the feedback non‐linearity. Copyright © 2004 John Wiley & Sons, Ltd.     

Low‐gain adaptive stabilization of semilinear second‐order hyperbolic systems

In this paper low‐gain adaptive stabilization of undamped semilinear second‐order hyperbolic systems is considered in the case where the input and output operators are collocated. The linearized systems have an infinite number of poles and zeros on the imaginary axis. The adaptive stabilizer is constructed by a low‐gain adaptive velocity feedback. The closed‐loop system is governed by a non‐linear evolution equation. First, the well‐posedness of the closed‐loop system is shown. Next, an energy‐like function and a multiplier function are introduced and the exponential stability of the closed‐loop system is analysed. Some examples are given to illustrate the theory. Copyright © 2004 John Wiley & Sons, Ltd.     

Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co₂GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co₂GaAs phase at the interface.